Research progress of GaAs-based 980nm high-power semiconductor lasers

모모INTRODUCTIONWithout exception, high powered laser pointers Our customers are willing to purchase their products, because high quality is the concept of their products. https://highpowerlaser.shop/collections/burning-laser

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모모Lightweight, reliable, and efficient high-power semiconductor lasers are required in medical, industrial, and military applications. Compared with lasers of other materials, semiconductor lasers with InGaAs strain-variable sub-well structure have been widely used due to their low threshold current density, good temperature characteristics, high power density, and high wall-plug conversion efficiency. Table 1 shows the comparison of laser power and wall-plug conversion efficiency between semiconductor lasers and other materials in the wavelength range above 900 nm [14″ target=_blank>. Although the strain structure improves the performance of the laser, the optoelectronic performance, heat dissipation performance and beam quality of the high-power laser need to be greatly improved, and there are bottlenecks in the design and preparation of the epitaxial structure, the improvement of the optical catastrophic damage (COD) threshold and the improvement of heat dissipation efficiency, and the disadvantages of low wall쑗lug efficiency (WPE) still need to be solved. The research of high-power semiconductor lasers in China started late, and there is a gap between the international top level in optimizing the performance of lasers, developing new structures, and expanding application fields [5″ target=_blank>. Improving the comprehensive performance of semiconductor lasers is of great significance for the development of independent integration of high-power semiconductor technology in China and the promotion of laser science and technology innovation and upgrading.

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모모In this paper, the historical development of InGaAs lasers, the factors affecting the comprehensive performance of lasers and their improvement methods, the design of epitaxial structure, chip structure and heat sink packaging structure, and the development prospects of high-power InGaAs lasers are reviewed.

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모모1 Historical development of high-power InGaAs quantum well lasers

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모모In 1984, Laidig et al. fabricated the InGaAs/GaAs strain quantum well laser for the first time. In 1991, Welch et al. [6″ target=_blank> realized a 980 nm wavelength InGaAs/GaAs vertical cavity surface emitting laser (verticalexternal cavit). 酵鍾樵田龍界杞裸裸鶯富徵 inglaser, VCSEL) at room temperature. In 1994, Fan et al. [7″ target=_blank> achieved a 1.05W output of a multi-quantum well InGaAs laser. In 2004, Chilla et al. [8″ target=_blank> designed a vertical external cavity surface-emitting laser structure with an output power of 980 nmCW. Up to 30W. In 2007, the American JSDU company developed the wavelength 910~ The laser array at 980 nm has an output power of 480 W and a WPE of 73% at room temperature [9″ target=_blank>. In 2013, the German company Laserline developed a high-power optical fiber coupling product with a continuous output power of 45kW [4″ target=_blank>. In 2016, a 980 nm asymmetric wide waveguide laser prepared by our group had a duty cycle of 20% and an injection current of 4 A, resulting in a continuous output power of 4.1 W per tube [10″ target=_blank>. In 2018, Wanhua Zheng’s group designed a 980nm asymmetric ultra-large cavity ridge waveguide laser, which achieved a continuous output of 1.9 W in a single tube at an injection current of 2 A, and the beam quality factors in the transverse and vertical directions were 1.77 and 1.47, respectively [9″ target=_blank>. Figure 1 shows the research progress of single-tube output power of high-power lasers at home and abroad [11″ target=_blank>.

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